MRAMS: THE POWERFUL UNIVERSAL MEMORY SOLUTION FOR ALL FUTURE COMPUTING APPLICATIONS

Here's an abstract of my research on this technology.

Over the last decade, we have witnessed a 'communication explosion' with which portable computing and communication devices are fast become an integral part of our lives. Consequently, there is a growing demand for non-volatile, high density and high-speed memory solutions in an industry pressing hard towards developing a system on a chip. No memory solutions currently available combine all these characteristics. We present a review of Magnetic Random Access Memory (MRAM) and its basic read-write operations. MRAMS employ the 'Tunnel Magneto Resistive (TMR) effect' observed across nanometer scale tunneling deposits. Special reference is given to the recent improvisations in its programming techniques that have led to the development of the 'Toggle MRAMS' which are far more robust than their predecessors. Combining all the above mentioned characteristics with almost limitless read-write endurance, this revolutionary technology holds the promise of becoming the universal memory solution for all computing applications.